? byv 10- 40 small signal schottky diodes description metal to silicon rectifier diodes in glass case featu- ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre- quency circuits. august 1998 ed : 1a do 41 (glass) symbol parameter value unit i f(av) average forward current* t amb = 60 c 1a i fsm surge non repetitive forward current t amb = 25 c t p = 10ms 25 sinusoidal pulse a t amb = 25 c t p = 300 m s 50 rectangular pulse t stg t j storage and junction temperature range - 65 to + 150 - 65 to + 125 c c t l maximum lead temperature for soldering during 10s at 4mm from case 230 c absolute ratings (limiting values) symbol parameter byv 10-40 unit v rrm repetitive peak reverse voltage 40 v * on infinite heatsink with 4mm lead length symbol test conditions value unit r th(j-a) junction-ambient* 110 c/w * on infinite heatsink with 4mm lead length thermal resistance 1/4
symbol test conditions min. typ. max. unit i r * t j = 25 c v r = v rrm 0.5 ma t j = 100 c 10 v f *i f = 1a t j = 25 c 0.55 v i f = 3a 0.85 static characteristics electrical characteristics symbol test conditions min. typ. max. unit c t j = 25 c v r = 0 220 pf dynamic characteristics * pulse test: t p 300 m s d < 2% . forward current flow in a schottky rectifier is due to majority carrier conduction. so reverse recovery is not affected by stored charge as in conventional pn junction diodes. nevertheless, when the device switches from for- ward biased condition to reverse blocking state, current is required to charge the depletion capaci- tance of the diode. this current depends only of diode capacitance and external circuit impedance. satisfactory circuit be- haviour analysis may be performed assuming that schottky rectifier consists of an ideal diode in pa- rallel with a variable capacitance equal to the junc- tion capacitance (see fig. 5 page 4/4). 2/4 fig.1 : forward current versus forward voltage at low level (typical values). fig.2 : forward current versus forward voltage at high level (typical values). byv 10-40
fig.3 : reverse current versus junction temperature. fig.4 : reverse current versus v rrm in per cent. fig.5 : capacitance c versus reverse applied voltage v r (typical values). fig.6 : surge non repetitive forward current for a rectangular pulse with t 10 ms. 3/4 byv 10-40
figure 7. surge non repetitive forward current versus number of cycles. 4/4 marking : clear, ring at cathode end. cooling method : by convection and conduction weight: 0.33g package mechanical data do 41 glass ca b o / o / d o / d c ref. dimensions millimeters inches min. max. min. max. a 4.07 5.20 0.160 0.205 b 2.04 2.71 0.080 0.107 c 28 1.102 d 0.712 0.863 0.028 0.034 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the cons equences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com byv 10-40
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